Skip navigation
Use este identificador para citar ou linkar para este item: http://repositorio.unb.br/handle/10482/6175
Arquivos associados a este item:
Arquivo Descrição TamanhoFormato 
ARTIGO_ElectronPhononScattering.pdf262,83 kBAdobe PDFVisualizar/Abrir
Registro completo de metadados
Campo DCValorIdioma
dc.contributor.authorDiniz, G. S.-
dc.contributor.authorQu, Fanyao-
dc.contributor.authorDiniz Neto, Omar de Oliveira-
dc.contributor.authorMilla, Augusto Miguel Alcalde-
dc.date.accessioned2010-12-15T16:04:47Z-
dc.date.available2010-12-15T16:04:47Z-
dc.date.issued2006-06-
dc.identifier.citationDINIZ, G. S. et al. Electron-phonon scattering in graded quantum dots. Brazilian Journal of Physics, São Paulo, v. 36, n. 2a, p. 372-374, jun. 2006. Disponível em: <http://www.scielo.br/pdf/bjp/v36n2a/a37v362a.pdf>. Acesso em: 13 dez. 2010. doi: 10.1590/S0103-97332006000300037.en
dc.identifier.urihttp://repositorio.unb.br/handle/10482/6175-
dc.description.abstractTheoretical calculations of electron-phonon scattering rates in GaAs/AlxGa1¡xAs spherical quantum dots have been performed by means of effective mass approximation in the frame of finite element method. The influence of a roughness interface and external magnetic fields are analysed for different scattering rate transition. Our results open interesting channels for electron dephasing times manipulation. Keywords: Theoretical calculations; Electron-phonon scattering; GaAs/AlxGa1¡xAsen
dc.language.isoInglêsen
dc.rightsAcesso Abertoen
dc.titleElectron-phonon scattering in graded quantum dotsen
dc.typeArtigoen
dc.subject.keywordCálculoen
dc.subject.keywordFótonen
dc.subject.keywordElétronsen
dc.identifier.doihttps://dx.doi.org/10.1590/S0103-97332006000300037en
Aparece nas coleções:Artigos publicados em periódicos e afins

Mostrar registro simples do item Visualizar estatísticas



Este item está licenciada sob uma Licença Creative Commons Creative Commons